Angebote zu "Noise" (7 Treffer)

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MEMS Accelerometer Modelling and Noise Analysis
59,00 € *
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MEMS Accelerometer Modelling and Noise Analysis ab 59 € als Taschenbuch: Modelling and Noise Analysis of Closed-Loop Capacitive Sigma-Delta MEMS Accelerometer. Aus dem Bereich: Bücher, Wissenschaft, Technik,

Anbieter: hugendubel
Stand: 08.12.2019
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Piezoelectric Accelerometers with Integral Elec...
85,99 € *
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This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/Hz). The discussion also includes ultra-low-noise (at level of 3 ng/Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. - Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; - Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; - Describes recently design of ultra-low-noise (at level of 3 ng/Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers; - Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/Hz) JFET; - Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.

Anbieter: buecher
Stand: 08.12.2019
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MEMS Accelerometer Modelling and Noise Analysis
59,00 € *
ggf. zzgl. Versand

MEMS Accelerometer Modelling and Noise Analysis ab 59 EURO Modelling and Noise Analysis of Closed-Loop Capacitive Sigma-Delta MEMS Accelerometer

Anbieter: ebook.de
Stand: 08.12.2019
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Piezoelectric Accelerometers with Integral Elec...
117,90 CHF *
ggf. zzgl. Versand

This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/vHz). The discussion also includes ultra-low-noise (at level of 3 ng/vHz) seismic IEPE accelerometers and high temperature (up to 175 °C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. . Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; . Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; . Describes recently design of ultra-low-noise (at level of 3 ng/vHz) IEPE seismic accelerometers and high temperature (up to 175 °C) triaxial and single axis miniature IEPE accelerometers; . Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/vHz) JFET; . Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.

Anbieter: Orell Fuessli CH
Stand: 08.12.2019
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Seismic response of unstable slopes using ambie...
65,99 € *
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The main purpose of the present work consists in the improvement of comprehension concerning directional amplification phenomena of slopes dynamic response by means of analysis of noise measurements. Ambient noise measurement tests, carried out using two kinds of portable sensors having different optimal response within different frequency ranges, have been aimed at formulating a possible generalization of the occurring conditions in prospect of using them as reliable indicators on the slopes behaviour in case of seismic event. A possible generalization should be based both on the comparison of instrumental data recorded during seismic events and on analysis of morphological and geological-technical characteristics of the test areas. In the context of this research project, the experimental tests have been mainly carried out within the municipality of Caramanico Terme, in Central Italy, since an ongoing accelerometer monitoring began in 2002 has provided data on slope dynamic behaviour by means of strong-motion recordings.

Anbieter: Thalia AT
Stand: 08.12.2019
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Piezoelectric Accelerometers with Integral Elec...
98,76 € *
ggf. zzgl. Versand

This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/vHz). The discussion also includes ultra-low-noise (at level of 3 ng/vHz) seismic IEPE accelerometers and high temperature (up to 175 °C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. . Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; . Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; . Describes recently design of ultra-low-noise (at level of 3 ng/vHz) IEPE seismic accelerometers and high temperature (up to 175 °C) triaxial and single axis miniature IEPE accelerometers; . Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/vHz) JFET; . Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.

Anbieter: Thalia AT
Stand: 08.12.2019
Zum Angebot